1 - 2 ? 2002 ixys all rights reserved 215 features ? npt 3 igbt - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits optional hiperfred tm diode - fast reverse recovery - low operating forward voltage - low leakage current to-247 package - industry standard outline - epoxy meets ul 94v-0 applications ac drives dc drives and choppers uninteruptible power supplies (ups) switched-mode and resonant-mode power supplies inductive heating, cookers igbt symbol conditions maximum ratings v ces t vj = 25c to 150c 1200 v v ges 20 v i c25 t c = 25c 60 a i c90 t c = 90c 40 a i cm v ge = 15 v; r g = 39 ? ; t vj = 125c 50 a v cek rbsoa, clamped inductive load; l = 100 h v ces t sc v ce = 900v; v ge = 15 v; r g = 39 ? ; t vj = 125c 10 s (scsoa) non-repetitive p tot t c = 25c 300 w symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. v ce(sat) i c = 40 a; v ge = 15 v; t vj = 25c 2.4 3.0 v t vj = 125c 2.8 v v ge(th) i c = 1 ma; v ge = v ce 4.5 6.5 v i ces v ce = v ces ; v ge = 0 v; t vj = 25c 0.4 ma t vj = 125c 0.4 ma i ges v ce = 0 v; v ge = 20 v 200 na t d(on) 150 ns t r 60 ns t d(off) 700 ns t f 50 ns e on 4.8 mj e off 4.0 mj c ies v ce = 25 v; v ge = 0 v; f = 1 mhz 2 nf q gon v ce = 600 v; v ge = 15 v; i c = 25 a 250 nc r thjc 0.42 k/w inductive load, t vj = 125c v ce = 600 v; i c = 40 a v ge = 15 v; r g = 39 ? i c25 = 60 a v ces = 1200 v v ce(sat) typ. = 2.4 v npt 3 igbt with optional diode advanced technical information ixys semiconductor gmbh edisonstr. 15, d-68623 lampertheim phone: +49-6206-503-0, fax: +49-6206-503627 ixys corporation 3540 bassett street, santa clara ca 95054 phone: (408) 982-0700, fax: 408-496-0670 ixeh 40n120 ixeh 40n120d1 ixeh 40n120 ixeh 40n120d1 to-247 ad g e c c (tab)
2 - 2 ? 2002 ixys all rights reserved ixeh 40n120 ixeh 40n120d1 diode [d1 version only ] symbol conditions maximum ratings i f25 t c = 25c 60 a i f90 t c = 90c 35 a symbol conditions characteristic values min. typ. max. v f i f = 40 a; t vj = 25c 2.6 3.0 v t vj = 125c 2.0 v i rm i f = 30 a; di f /dt = -500 a/s; t vj = 125c 27 a t rr v r = 600 v; v ge = 0 v 150 ns r thjc (per diode) 1.0 k/w to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc component symbol conditions maximum ratings t vj -55...+150 c t stg -55...+150 c m d mounting torque 0.8...1.2 nm symbol conditions characteristic values min. typ. max. r thch with heatsink compound 0.25 k/w weight 6g
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